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RHRU15090, RHRU150100
April 1995 File Number 3589.2
150A, 900V - 1000V Hyperfast Diodes
RHRU15090 and RHRU150100 (TA49072) are hyperfast diodes with soft recovery characteristics (tRR < 90ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Features
* Hyperfast with Soft Recovery<90ns * Operating Temperature+175oC * Reverse Voltage Up To1000V * Avalanche Energy Rated * Planar Construction
Applications
* Switching Power Supplies * Power Switching Circuits * General Purpose
Ordering Information
PACKAGING AVAILABILITY PART NUMBER RHRU15090 RHRU150100 PACKAGE TO-218 TO-218 BRAND RHRU15090 RHR150100
Package
JEDEC STYLE TO-218
ANODE CATHODE (FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified RHRU15090 RHRU150100 1000 1000 1000 150 300 1500 375 50 -65 to +175 UNITS V V V A A A W mj oC
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = +42oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ
900 900 900 150 300 1500 375 50 -65 to +175
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
RHRU15090, RHRU150100
Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS RHRU15090 SYMBOL VF VF IR TEST CONDITION IF = 150A, TC = +25oC IF = 150A, TC = +150oC VR = 900V, TC = +25oC VR = 1000V, TC IR = +25oC MIN TYP 65 30 MAX 3.0 2.5 500 3.0 90 100 0.4 MIN RHRU150100 TYP 65 30 MAX 3.0 2.5 500 3.0 90 100 0.4 UNITS V V A A mA mA ns ns ns ns
oC/W
VR = 900V, TC = +150oC VR = 1000V, TC = +150oC
tRR
IF = 1A, dIF/dt = 100A/s IF = 150A, dIF/dt = 100A/s
tA tB RJC DEFINITIONS
IF = 150A, dIF/dt = 100A/s IF = 150A, dIF/dt = 100A/s
VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). RJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy (See Figures 7 and 8). pw = pulse width. D = duty cycle.
V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt R1 L1 = SELF INDUCTANCE OF R4 +LLOOP Q1 +V1 0 t2 t1 R2
+V3 Q2 t1 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) R4 10 LLOOP DUT Q4 0 0.25 IRM C1 R4 IRM IF dIF dt tRR tA tB
t3 0 -V2 R3
Q3 -V4 VR VRM
FIGURE 1. tRR TEST CIRCUIT
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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RHRU15090, RHRU150100 Typical Performance Curves
500 3000 1000 IF, FORWARD CURRENT (A) IR , REVERSE CURRENT (A) +175oC
100 +175oC +100oC +25oC 10
100 +100oC 10
1.0
+25oC
0.1
1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, FORWARD VOLTAGE (V)
0.01 0 200 400 600 800 1000 VR , REVERSE VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP
120 100 t, RECOVERY TIMES (ns)
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE
IF(AV) , AVERAGE FORWARD CURRENT (A) 160
120 DC
80 60
tRR
tA
80
SQ. WAVE
40 tB 20
40
0 1 10 IF, FORWARD CURRENT (A) 100 150
0 25
50
75
100
125
150
175
TC , CASE TEMPERATURE (oC)
FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT
IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 & Q2 ARE 1000V MOSFETs Q1
FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES
L
R+ VDD
130
1M DUT VAVL
12V
Q2
130
CURRENT SENSE VDD -
IL IV
12V
t0
t1
t2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
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